High side p-channel fet driver

The LTC single driver allows 3V- or 5V-based digi-tal circuits to drive power P-channel MOSFETs at high speeds. A power MOSFET’s gate-charge loss increases with switching frequency and transition time. The LTC is capable of driving a 1nF load with 16ns rise and fall times using a VCC of 12V. This eliminates the need for higherFile Size: KB. the P-channel MOSFET chip area is ~ times of N-channel MOSFET chip area. In high frequency switching application in which switching loss is dominant the P-channel MOSFET should have similar total gate charge to that of N-channel MOSFET. If two MOSFET have the same gate charge and driven in similar way, their switching losses are similar. In this case, the File Size: KB. procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the 20 Level-Shifted P-Channel MOSFET Driver.

I need a high side switch. I thought about using a p-channel MOSFET. The source will be connected to around 50VV. How can I drive this MOSFET? I can't find a driver which can switch between 60V and 45V in order to put the MOSFET on and off. They all switch between ground and Vcc, which is generally below 25V. High Side Gate drivers provide the ability to switch Desktop, Notebook, and Netbook power rails ON and OFF in a more efficient and linear manner by facilitating the use of N-channel MOSFETs rather than typical P-channel MOSFETs. High Side Gate drivers substantially reduce part count, thereby saving sleep mode power (via reduction in leakage current) and reducing PCB area at cost parity with existing solutions. P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Getting n-type performance out of p-type FETs has meant.

The most important advantage of P-channel power MOSFETs is the simplified gate driving technique in the high-side (HS) switch position. For a P-channel enhancement MOSFET, the Gate potential must be more and the positive supply rail (high-side switching) as we do with PNP transistors. Jul I would like to drive a p channel mosfet, since i could not find a reason for using high-side rather than low-side driving is purely as.